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Semiconductor

RF GaN-on-SiC devices

KX2-2046-in production

20W X-Band GaN-On-SiC High Power MMIC Amplifier

The KX2 is an X-band high-power MMIC amplifier fabricated on the GaN-on-SiC process.  It operates from 8.0 – 10.5 GHz and typically provides 20W saturated output power with power-added efficiency of 46%.

The KX2 can support military and commercial radar systems. It is matched to 50Ω with integrated DC blocking capacitors on both RF input and output ports.

The KX2 is 100% DC and RF tested on-wafer. It is available in chip form

  • Frequency range: 8.0-10.5GHz

  • High output power: 20W

  • High PAE: 46%

  • Linear Gain: 26dB

  • DC bias: Vd=28V @ Idq=0.3A

  • Pulsed Vg: PW=100µs, DC=10%

  • Chip size: 2.95x1.66x0.1mm

  • Available in bare die

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