RF GaN-on-SiC devices
KX2-2046-in production
20W X-Band GaN-On-SiC High Power MMIC Amplifier
The KX2-2046 is an X-band high-power MMIC amplifier fabricated on the GaN-on-SiC process. It operates from 8.0 – 10.5 GHz and typically provides 20W saturated output power with power-added efficiency of 46%.
The KX2-2046 can support military and commercial radar systems. It is matched to 50Ω with integrated DC blocking capacitors on both RF input and output ports.
The KX2-2046 is 100% DC and RF tested on-wafer. It is available in chip form
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Frequency range: 8.0-10.5GHz
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High output power: 20W
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High PAE: 46%
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Linear Gain: 26dB
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DC bias: Vd=28V @ Idq=0.3A
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Pulsed Vg: PW=100µs, DC=10%
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Chip size: 2.95x1.66x0.1mm
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Available in bare die
KX1-3046-in production
30W X-Band GaN-On-SiC High Power MMIC Amplifier
The KX1-3046 is an X-band high-power MMIC amplifier fabricated on the GaN-on-SiC process. It operates from 8.0 – 10.5 GHz and typically provides 30W saturated output power with power-added efficiency of 46%.
The KX1-3046 can support military and commercial radar systems. It is matched to 50Ω with integrated DC blocking capacitors on both RF input and output ports.
The KX1-3046 is 100% DC and RF tested on-wafer. It is available in chip form
-
Frequency range: 8.0-10.5GHz
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High output power: 30W
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High PAE: 46%
-
Linear Gain: 28dB
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DC bias: Vd=28V @ Idq=0.6A
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Pulsed Vg: PW=100µs, DC=10%
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Chip size: 2.95x3.10x0.1mm
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Available in bare die
